VPD ICP-MS

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VPD-ICP-MS combines vapor phase decomposition with the ultra-trace sensitivity of ICP-MS to detect surface metal contaminants on semiconductor wafers. It is a gold-standard technique in semiconductor contamination control, particularly for measuring metal impurities at sub-ppt/cm² levels.

Introduction

VPD-ICP-MS combines d vapor phase composition with the ultra-trace sensitivity of ICP-MS to detect surface metal contaminants on semiconductor wafers. It is a gold-standard technique in semiconductor contamination control, particularly for measuring metal impurities at sub-ppt/cm² levels. Key Features:

Surface-sensitive detection of metallic impurities
Sub-ppt/cm² detection limits
Non-destructive wafer-level analysis
Essential for semiconductor process control and yield assurance

Principle

The VPD-ICP-MS process involves vapor-phase surface extraction followed by solution-based elemental analysis:

A reactive acid vapor (commonly HF-based) is exposed to the wafer surface in a controlled environment
Surface oxides are decomposed, and trace metals are volatilized or solubilized into the condensed phase
The condensed acid is collected and transferred into a clean container
The solution is analyzed by ICP-MS for ultra-trace elemental quantification
This method enables extraction of trace contaminants without mechanically damaging the wafer or altering its microstructure.

Test Procedure

VPD-ICP-MS testing typically follows these steps:

Wafer pre-cleaning (optional): Remove particles and organics

VPD is non-destructive and offers superior sensitivity for surface metal contamination.

No, it is designed for ionic or metallic contamination. Particle contamination requires separate techniques (e.g., SPV, particle counters).

Most transition metals, alkali, alkaline earth, and heavy metals (e.g., Fe, Cu, Zn, Ni, Cr, Na, K, Ca, Al).

Yes, as long as the surface is clean and free from coatings like resist or polyimide.

HF vapors are highly toxic and corrosive. Procedures must be conducted in dedicated, ventilated systems with trained personnel.

Industrial Application

Application of VPD-ICP-MS

VPD-ICP-MS is suitable for trace metal detection on wafer surfaces and other flat substrates. Its ability to detect metal contaminants at extremely low surface concentrations makes it ideal for advanced microelectronics and compound semiconductor applications.

Typical Sample Types:

Silicon wafers (150–300 mm)
Compound semiconductors (e.g., GaAs, SiC)
Photomask substrates
MEMS and other high-purity surfaces

Common Application Areas:

Contamination control in semiconductor manufacturing
Process qualification and monitoring
Wafer cleaning validation
Failure analysis and root cause investigations
Tool and chemical cleanliness verification

Element	Surface Concentration (×10⁹ atoms/cm²)	Detection Limit (×10⁷ atoms/cm²)
Fe	3.2	5.0
Cu	1.1	4.0
Ni	0.8	4.5
Zn	0.6	3.0
Cr	0.5	3.0
Note: Detection limits may vary depending on sample size and recovery efficiency.

Test Procedure

To ensure accurate results, please follow the guidelines below:

Substrate type: Silicon or compound semiconductor wafers
Wafer size: 150 mm to 300 mm standard; custom sizes upon request
Condition: Clean and dry, free of photoresist or particles
Packaging: Class 100 wafer boxes or certified single-wafer containers
Storage: Avoid exposure to metals or moisture prior to testing
Special notice: Inform if wafers contain unusual coatings or are hazardous

Attribute	VPD-ICP-MS	Total Digestion ICP-MS
Principle	Surface vapor decomposition	Bulk acid digestion
Sensitivity	Sub-ppt /cm²	ppt–ppb
Material Damage	None	Destructive
Substrate	Wafers, smooth surfaces	Liquids or solids (digested)
Use Case	Surface contamination control	General elemental analysis

Regulatory testing

Environmental testing

Data analysis

Regulatory testing

Environmental testing

Data analysis

Sample Requirements

Application Case

Example Result

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