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X-ray reflectometry (XRR) is a non-destructive technique that studies thin films, surfaces, and interfaces. It measures X-ray intensity at grazing incidence angles, providing detailed information on the surface and near-surface region. XRR characterizes thin film thickness, density, and roughness, as well as interfacial properties. It's applied in materials science, physics, chemistry, and biology to investigate various materials. XRR's high sensitivity and non-invasive nature make it ideal for understanding material properties at the nanoscale, optimizing deposition processes, and improving device performance.
X-ray Reflectometry (XRR) is an analytical technique that measures the intensity of X-rays reflected off a flat surface or thin film at very shallow angles (typically < 0-5°). By analyzing how the reflected intensity changes with the incident angle, it provides highly precise, non-destructive information about:
Our XRR testing workflow typically includes:
In addition to providing the crystallization direction of the sample, XRR can also calculate the grain size, crystallinity, and can be used with a database to measure the composition ratio.
| Feature | XRR (X-ray Reflectivity) | XRD (X-ray Diffraction) |
|---|---|---|
| Primary Purpose | Thin film characterization | Crystal structure analysis |
| Key Measurements | Thickness, density, roughness of layers | Crystal phases, lattice parameters, crystallite size |
| Angle Range | Very low angles (0.1° to 5°) | Higher angles (5° to 90°) |
| Physics Principle | Total external reflection & interference | Bragg diffraction |
| Information Depth | Surface/near-surface (nm to μm) | Bulk material (μm to mm) |
| Sample Requirements | Ultra-smooth surface required | Powder, solid, or polycrystalline samples |
| Output Data | Oscillations in reflectivity curve | Sharp diffraction peaks |
| Typical Applications | Semiconductor layers, coatings, membranes | Mineralogy, metallurgy, pharmaceuticals |
Yes. XRR is non-destructive and probes all interfaces (e.g., SiO₂/SiN on silicon).
To precisely control the insulating properties of semiconductor devices, a silicon dioxide (SiO₂) layer is deposited on a silicon wafer. The target thickness is around 50 nm. XRR is used to measure the actual thickness, density, and interface roughness of the SiO₂ layer. The X-ray reflectivity curve is collected and fitted with a theoretical model, yielding a thickness of 48.7 nm, a density close to the bulk value, and a smooth interface. This ensures the film meets the process requirements for device fabrication.
In the production of high-reflectivity mirrors, alternating layers of metal (e.g., molybdenum) and dielectric (e.g., silicon) are deposited on a glass substrate. Each layer is designed to be a few nanometers thick. XRR is employed to analyze the total thickness, individual layer thicknesses, and interface quality. The reflectivity data reveals well-defined Kiessig fringes, indicating sharp interfaces and uniform layers. The fitting results confirm the intended multilayer structure, and any deviations can be quickly identified and corrected in the deposition process.
