Delivery time: 1 ~ 2 weeks
Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) provides elemental, chemical state, and molecular information from surfaces of solid materials. The average depth of analysis for a TOF-SIMS measurement is approximately 1 nm. Physical Electronics TOF-SIMS instruments provide an ultimate spatial resolution of less than 0.1 µm. Spatial distribution information is obtained by scanning a micro-focused ion beam across the sample surface. Depth distribution information is obtained by combining TOF-SIMS measurements with ion milling (sputtering) to characterize a thin film structure. In addition, the Physical Electronics TOF-SIMS instrument provides a unique 3D analysis capability that combines in-situ focused ion beam sectioning with high mass resolution and high spatial resolution imaging (HR²) to provide 3D chemical characterization. Application range: Surface characterization: via mass spectroscopy to characterize and analyze the element (atom, ion), isotope, and molecular structure of sample surfaces. Structural analysis: via line scanning and 2D mapping to visualize the element distribution. Composition analysis in depth.
Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) provides elemental, chemical state, and molecular information from surfaces of solid materials. The average depth of analysis for a TOF-SIMS measurement is approximately 1 nm. Physical Electronics TOF-SIMS instruments provide an ultimate spatial resolution of less than 0.1 µm. Spatial distribution information is obtained by scanning a micro-focused ion beam across the sample surface. Depth distribution information is obtained by combining TOF-SIMS measurements with ion milling (sputtering) to characterize a thin film structure. In addition, the Physical Electronics TOF-SIMS instrument provides a unique 3D analysis capability that combines in-situ focused ion beam sectioning with high mass resolution and high spatial resolution imaging (HR²) to provide 3D chemical characterization. Application range: Surface characterization: via mass spectroscopy to characterize and analyze the element (atom, ion), isotope, and molecular structure of sample surfaces. Structural analysis: via line scanning and 2D mapping to visualize the element distribution. Composition analysis in depth.
50mg of powder sample; The film/block sample is about 1*1 cm in length and width, with a thickness not exceeding 5 mm. It is stored in vacuum and marked clearly on the test surface
Application 1: Surface elemental analysis via mass spectroscopy [img]output_images\e29badd7-08c8-4cb5-b0e1-290a46a9c557_img_2.png[/img] Caption: ToF-SIMS mass spectroscopy Application 2: 2D mapping [img]output_images\e29badd7-08c8-4cb5-b0e1-290a46a9c557_img_3.png[/img] Caption: ToF-SIMS 2D mapping Application 3: Compositional depth profile [img]output_images\e29badd7-08c8-4cb5-b0e1-290a46a9c557_img_4.png[/img] Caption: ToF-SIMS compositional depth profile Application 4: 3D image [img]output_images\e29badd7-08c8-4cb5-b0e1-290a46a9c557_img_5.png[/img] Caption: ToF-SIMS compositional depth profile and 3D image
